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Investigation of the influence of a dislocation loop layer on interstitial kinetics during surface oxidation of silicon

✍ Scribed by D Tsoukalas; D Skarlatos; J Stoemenos

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

A kinetic model of the formation and gro

✍ V.I. Talanin; I.E. Talanin 📂 Article 📅 2012 🏛 Elsevier Science 🌐 English ⚖ 302 KB

Influence of the Native Oxide Layer on t

✍ Markwitz, Andreas ;White, Geoffrey Vaughan ;Trompetter, William Joseph ;Brown, I 📂 Article 📅 2001 🏛 Springer-Verlag ⚖ 421 KB

Effect of dislocations on the shape of i

✍ A. A. Shklyaev; K. N. Romanyuk; A. V. Latyshev; A. V. Arzhannikov 📂 Article 📅 2011 🏛 SP MAIK Nauka/Interperiodica 🌐 English ⚖ 592 KB

Monte Carlo simulations of the effects o

✍ A.M Mazzone 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 307 KB

A theoretical investigation on the chemi

✍ F. Cargnoni; L. Colombo; C. Gatti 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 344 KB

On the influence of a gaseous boundary l

✍ P. Barlier; J. P. Torre 📂 Article 📅 1979 🏛 Springer 🌐 English ⚖ 456 KB