A theoretical investigation on the chemical bonding of interstitial and vacancy defects in silicon during their migration

✍ Scribed by F. Cargnoni; L. Colombo; C. Gatti

• Book ID: 114168768
• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 344 KB
• Volume: 127-128
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/s0168-583x(96)00890-7