Investigation of the hall coefficient in epitaxial layers of AlxGa1–xAs solid solutions doped with tellurium

Preparation and Investigation of Epitaxi

Preparation and Investigation of Epitaxial Layers of AlxGa1-xAs solid Solutions and of Heterojunctions in the AlAs-GaAs system

✍ Dr. Zh. I. Alferov; V. M. Andreyev; V. I. Korol'Kov; E. L. Portnoi 📂 Article 📅 1969 🏛 John Wiley and Sons 🌐 English ⚖ 554 KB

Single crystal epitaxial layers of A1,Gal -,As solid solutions and GaAs-Al,Gal -,As heterojunctions were obtained on gallium arsenide substrates by crystallization from a solution of arsenic in a gallium-aluminium melt,. Multilayer structures of the type p(n)GaAs-p(n)Al,~Gal-,,As-p(n)Al,,Gal-., As-n