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Investigation of the dependence of the photoluminescence properties of silicon nanoclusters on their volume fraction in a silicon oxide matrix

✍ Scribed by Emelyanov, A. V.; Shvydun, N. V.; Zhigunov, D. M.; Timoshenko, V. Yu.; Seminogov, V. N.; Kashkarov, P. K.


Book ID
114991103
Publisher
Pleiades Publishing
Year
2012
Tongue
English
Weight
184 KB
Volume
6
Category
Article
ISSN
1027-4510

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In this work, new observations noted in the capacitance-voltage (CV) behaviour of polysilicon/oxide/silicon capacitor structures are reported. As the doping concentration in the polysilicon layer is reduced, anomalous CV characteristics are observed, which are not related to depletion into the polys