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Investigation of the atomic crystal plane relief by X-ray epitaxial film interferometer

โœ Scribed by A.V. Kolesnikov; A.P. Vasilenko; E.M. Trukhanov; L.V. Sokolov; A.A. Fedorov; O.P. Pchelyakov; S.I. Romanov

Book ID
108416237
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
565 KB
Volume
166
Category
Article
ISSN
0169-4332

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๐Ÿ“œ SIMILAR VOLUMES

Lattice disorder investigation of SIMOX
Lattice disorder investigation of SIMOX film by multi-crystal X-ray diffractometry
โœ A.Yu. Nikulin; A.A. Snigirev; V.V. Starkov; P.L.E. Hemment; A.F. Vyatkin ๐Ÿ“‚ Article ๐Ÿ“… 1992 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 335 KB

Multi-crystal X-ray diffraction has been used to study the strain located close to the Si-SiO 2 interface of device grade SIMOX substrates. It is found that the strain is located within a layer whose thickness is about 15% of the silicon overlayer. The quality of this layer can be restored by anneal