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Investigation of STI edge effect on programming disturb in localized charge trapping SONOS flash memory cells

✍ Scribed by Yue Xu; Feng Yan; ZhiGuo Li; Fan Yang; Jianguang Chang; YongGang Wang

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Numerical Simulation of Bottom Oxide Thi

✍ Gu, S.-H.; Hsu, C.-W.; Wang, T.; Lu, W.-P.; Ku, Y.-H. J.; Lu, C.-Y. 📂 Article 📅 2007 🏛 IEEE 🌐 English ⚖ 804 KB