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Investigation of single-electron dynamics in tunnelling between zero- and one-dimensional states

✍ Scribed by M. Kataoka; M.R. Astley; A.L. Thorn; C.H.W. Barnes; C.J.B. Ford; D. Anderson; G.A.C. Jones; I. Farrer; D.A. Ritchie; M. Pepper

Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
754 KB
Volume
40
Category
Article
ISSN
1386-9477

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We present a model for alloys of compound semiconductors by introducing a one-dimensional binary random system where impurities are placed in one sublattice while host atoms lie on the other sublattice. The source of disorder is the stochastic fluctuation of the impurity energy from site to site. Al