We present a theory of the evolution of the electronic structure of GaAsN alloys, from the dilute impurity limit to the fully formed alloy. Using large scale empirical pseudopotential calculations, we show how substitutional nitrogen forms Perturbed Host States (PHS) inside the conduction band where
Electron States in a Class of One-Dimensional Random Binary Alloys
✍ Scribed by F. Domínguez-Adame; I. Gómez; A. Avakyan; D. Sedrakyan; A. Sedrakyan
- Publisher
- John Wiley and Sons
- Year
- 2000
- Tongue
- English
- Weight
- 105 KB
- Volume
- 221
- Category
- Article
- ISSN
- 0370-1972
No coin nor oath required. For personal study only.
✦ Synopsis
We present a model for alloys of compound semiconductors by introducing a one-dimensional binary random system where impurities are placed in one sublattice while host atoms lie on the other sublattice. The source of disorder is the stochastic fluctuation of the impurity energy from site to site. Although the system is one-dimensional and random, we demonstrate analytically and numerically the existence of a set of extended states in finite systems, whose energy lies close to that of host atoms.
📜 SIMILAR VOLUMES
We study the effects of screening on the binding energy of positively and negatively charged impurities in the quasi-one-dimensional electron gas. We assume a parabolic confinement for the electron gas. Many-body effects beyond the random-phase approximation and the valley degeneracy are taken into