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Evolution of Electron States with Composition in GaAsN Alloys

✍ Scribed by P.R.C. Kent; A. Zunger

Publisher: John Wiley and Sons
Year: 2001
Tongue: English
Weight: 96 KB
Volume: 228
Category: Article
ISSN: 0370-1972
DOI: 10.1002/1521-3951(200111)228:1<253::aid-pssb253>3.0.co;2-v

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✦ Synopsis

We present a theory of the evolution of the electronic structure of GaAsN alloys, from the dilute impurity limit to the fully formed alloy. Using large scale empirical pseudopotential calculations, we show how substitutional nitrogen forms Perturbed Host States (PHS) inside the conduction band whereas small nitrogen aggregates form localized Cluster States (CS) in the band gap. By following the evolution of these states with increasing nitrogen composition we develop a model that explains many of the experimentally observed phenomena, including high effective masses, Stokes shift in emission versus absorption, and anomalous pressure dependence.

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