Investigation of post-growth Cu-diffusion in In-rich CuInSe2 films
β Scribed by O Ka; H Alves; I Dirnstorfer; T Christmann; B.K Meyer
- Book ID
- 114086917
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 153 KB
- Volume
- 361-362
- Category
- Article
- ISSN
- 0040-6090
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High-quality CuInSe 2 films with various Cu/In ratios were fabricated using hybrid sputtering and evaporation techniques. The Cu/In ratio was found to affect the structural and electrical properties of CuInSe 2 films, resulting in a change in the conversion efficiency of CuInSe 2 solar cells. CuInSe
The Cu-rich CuInSe 2 (CIS) epitaxial films with yΒΌ [Cu]/[In] ΒΌ1.65 are grown on GaAs(0 0 1) substrates using the MBE technique at substrate temperatures ranging from 400 to 600 1C. The unusual background and broad peaks in the XRD spectra are found at 2y between 671 and 691, which are not accounted