Investigation of high-quality CuInSe2 films with various Cu/In ratios

✍ Scribed by Hang-Ju Ko; Gyoung-Hoon Lee; Hyo-Jin Kim; Myoung-Soo Han; Chae-Hwan Jeong; Jong-Ho Lee; Ho-Sung Kim; Jin-Hyeok Kim; Kwang-Bok Kim; Suk-Ho Lee

• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 610 KB
• Volume: 322
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/j.jcrysgro.2011.02.043

✦ Synopsis

High-quality CuInSe 2 films with various Cu/In ratios were fabricated using hybrid sputtering and evaporation techniques. The Cu/In ratio was found to affect the structural and electrical properties of CuInSe 2 films, resulting in a change in the conversion efficiency of CuInSe 2 solar cells. CuInSe 2 films with various Cu/In ratios were characterized by scanning electron microscopy (SEM), Hall effect measurements and X-ray diffraction (XRD). The lowest pit density was observed on the surface of CuInSe 2 films with Cu/In ratio of 0.87. The CuInSe 2 films are composed of two layers with large and small grains at the top and bottom, respectively. XRD revealed the surface of the CuInSe 2 films to have a preferred orientation of (1 1 2) planes. The XRD intensity and full width at half maximum of the (1 1 2) plane of CuInSe 2 varied according to the Cu/In ratio. The mobility estimated form the Hall effects revealed large changes in CuInSe 2 films according to the Cu/In ratio.