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Investigation of negative differential resistance phenomena in GaSb/AlSb/InAs/GaSb/AlSb/InAs structures

โœ Scribed by Yeong-Her Wang; Meng Hwang Liu; Mau Phon Houng; Chen, J.F.; Cho, A.Y.


Book ID
114535894
Publisher
IEEE
Year
1994
Tongue
English
Weight
776 KB
Volume
41
Category
Article
ISSN
0018-9383

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Study of Stark effect in AlSb/GaSb/InAs/
โœ Y.W. Chen; H.S. Li; K.L. Wang ๐Ÿ“‚ Article ๐Ÿ“… 1993 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 161 KB

A novel quantum well structure is proposed based on a type II staggered bandoffset material system, for example, an AlSb/InAs/GaSb/AlSb quantum well[1]. In this type of quantum well, the valence band of GaSb is higher than the conduction band of InAs. The overlap band offset property of this quantum