Microstructural Evolution of Electrochem
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Young-Il Kim; C.S. Yoon; J.W. Park
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Article
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2001
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Elsevier Science
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English
⚖ 559 KB
SnO 2 and Si-doped SnO 2 thin-5lm electrodes were deposited on a Mo/Si substrate with an e-beam evaporator at room temperature. In the voltage range of 0.1+0.8 V, a reversible capacity of 400 mAh/g was attained after 200 cycles with the Si doping whereas the pure SnO 2 exhibited a much faster capaci