Investigation of gate edge effect on interface trap density in 3C–SiC MOS capacitors

✍ Scribed by T. Gutt; T. Małachowski; H.M. Przewłocki; O. Engström; M. Bakowski; R. Esteve

• Book ID: 116760366
• Publisher: Elsevier Science
• Year: 2012
• Tongue: English
• Weight: 422 KB
• Volume: 177
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/j.mseb.2012.03.007