Investigation of forming-gas annealed CeO2thin film on GaN
β Scribed by Hock Jin Quah; Kuan Yew Cheong; Zainuriah Hassan; Zainovia Lockman
- Publisher
- Springer US
- Year
- 2010
- Tongue
- English
- Weight
- 597 KB
- Volume
- 22
- Category
- Article
- ISSN
- 0957-4522
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
## Abstract Samariumβdoped cerium oxide (CeO~2~:Sm) and undoped cerium oxide (CeO~2~) thin films were fabricated by electrodeposition on biaxially textured Niβ3% W substrates. The electrodeposited layers were annealed for several hours at temperatures ranging from 910 to 980 Β°C. The resulting cryst
## Abstract Equimolar CeO~2~βTiO~2~ multi layer (3β7) thin films were prepared by spin coating technique in different spin speed (1500β4000 rpm), by using solβgel route. The dependence of deposition conditions on the optical and structural properties of the films was investigated. Scanning electron