✦ LIBER ✦

Investigation of flicker noise in silicon diodes under reverse bias

✍ Scribed by J. Hájek; V. Papež; B. Kojecký

Book ID: 113800627
Publisher: Elsevier Science
Year: 2012
Tongue: English
Weight: 816 KB
Volume: 52
Category: Article
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2011.10.021

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Formulas of 1/f noise in Schottky barrie

Formulas of 1/f noise in Schottky barrier diodes under reverse bias

✍ Chan Hyeong Park; Jong-Ho Lee 📂 Article 📅 2012 🏛 Elsevier Science 🌐 English ⚖ 417 KB

A theoretical investigation on the gener

A theoretical investigation on the generation current in silicon p-n junctions under reverse bias

✍ P.U. Calzolari; S. Graffi 📂 Article 📅 1972 🏛 Elsevier Science 🌐 English ⚖ 621 KB

Investigation of Reverse Leakage Charact

Investigation of Reverse Leakage Characteristics of InGaN/GaN Light-Emitting Diodes on Silicon

✍ Kim, Jaekyun; Kim, Jun-Youn; Tak, Youngjo; Kim, Joosung; Hong, Hyun-Gi; Yang, Mo 📂 Article 📅 2012 🏛 IEEE 🌐 English ⚖ 282 KB

1ƒ noise measurements in ion-implanted s

1ƒ noise measurements in ion-implanted silicon resistors as a function of the substrate reverse bias voltage

✍ H.G.E. Beck 📂 Article 📅 1977 🏛 Elsevier Science 🌐 English ⚖ 388 KB

Transient and ac electrical transport un

Transient and ac electrical transport under forward and reverse bias conditions in aluminum/porous silicon∕p-cSi structures

✍ Theodoropoulou, M.; Karahaliou, P. K.; Krontiras, C. A.; Georga, S. N.; Xanthopo 📂 Article 📅 2004 🏛 American Institute of Physics 🌐 English ⚖ 328 KB

A theoretical investigation on the gener

A theoretical investigation on the generation current in silicon p-n junctions under reverse bias : P. U. Calzolary and S. Graffi. Solid St. Electron. 15 (1972), p. 1003

📂 Article 📅 1973 🏛 Elsevier Science 🌐 English ⚖ 112 KB