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Investigation of exciton complexes in 6H-SiC by isotope substitution

✍ Scribed by S.H. Hagen; A.W.C. Van Kemenade

Publisher
Elsevier Science
Year
1973
Tongue
English
Weight
240 KB
Volume
6
Category
Article
ISSN
0022-2313

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In this paper, the influence of V/III molar flow ratio during AlN growth on SiC on growth mode and in-plane strain is investigated. AlN layers of $ 300 nm thickness were grown by metal-organic vapor phase epitaxy (MOVPE) on semi-insulating 6H-SiC and the V/III ratio was changed from 240 to 8200 on f