Acceptor boron in α-SiC (6H): Investigation by the photocapacitance method
✍ Scribed by Ballandovich, V. S. ;Tairov, Yu. M. ;Violina, G. N.
- Publisher
- John Wiley and Sons
- Year
- 1981
- Tongue
- English
- Weight
- 568 KB
- Volume
- 65
- Category
- Article
- ISSN
- 0031-8965
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## Abstract Misoriented domains (MDs) are common defects in 6H‐SiC single crystals. We performed an experimental study on the formation of MDs in 2‐inch 6H‐SiC single crystals. Micro‐Raman spectroscopy revealed that the polytype of MDs was mainly 4H‐SiC. By changing growth conditions, it was found
Multiple scar~crmg Xu cllcukkns on the F& cluster are used to mvest~gatc the participation of the radnl functions III the bondmg mecknusms of rh+ cluster. The totA electron dcwnly st the lran nucleus is used to interpret Uassbxwr somer MI data and determme the uon isomer shdt cabbrstion constant.