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Investigation of Excess Carrier Diffusion in Ga0.35Al0.65As by Cathodoluminescence

โœ Scribed by Mitdank, R. ;Sturm, A. ;Jacobs, B.


Book ID
105381830
Publisher
John Wiley and Sons
Year
1990
Tongue
English
Weight
448 KB
Volume
117
Category
Article
ISSN
0031-8965

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We studied the optical properties of GaAs/Al 0X35 Ga 0X65 As asymmetric double quantum wells at T 4X2 K and in the presence of in-plane magnetic fields up to 20 T. In an electric field F 8 45 kV/cm, electrons and holes are respectively confined in the wide and narrow well and form spatially indirect