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Investigation of electrically active defects of silicon carbide using atomistic scale modeling and simulation

✍ Scribed by Aveek Chatterjee; Asha Bhat; Kevin Matocha

Publisher: Elsevier Science
Year: 2007
Tongue: English
Weight: 535 KB
Volume: 401-402
Category: Article
ISSN: 0921-4526
DOI: 10.1016/j.physb.2007.08.118

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📜 SIMILAR VOLUMES

On the characterization of electrically

On the characterization of electrically active inhomogeneities in semiconductor silicon by charge collection at schottky barriers using the SEM-EBIC (II). Contrast due to defects

✍ M. Kittler 📂 Article 📅 1980 🏛 John Wiley and Sons 🌐 English ⚖ 696 KB