๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Investigation of defects in boron implanted silicon by means of p-n junction

โœ Scribed by R Lenhard; S Luby


Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
251 KB
Volume
41
Category
Article
ISSN
0042-207X

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Laser annealing of plasma implanted boro
โœ A. Florakis; D. Tsoukalas; I. Zergioti; K. Giannakopoulos; P. Dimitrakis; D.G. P ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 558 KB

This work combines plasma doping implantation (PLAD) with laser annealing using excimer laser, for the formation of ultra-shallow junctions. For that purpose, high dose BF 3 was implanted in n-type silicon wafers using PLAD. The as implanted material was investigated by high resolution TEM, measured