Numerical simulation has been used to construct the concentration profiles of Ga and P atoms in In-rich melt at successive equally spaced layers in front of an InGaP crystal growing under normal conditions of liquid phase epitaxy (LPE). The growth rate has been calculated using the concentration gra
Investigation of concentration profiles and growth rate of InAs LPE by computer simulation technique
β Scribed by H. Rezagholipour Dizaji; R. Dhanasekaran
- Publisher
- Italian Physical Society
- Year
- 1995
- Tongue
- English
- Weight
- 408 KB
- Volume
- 17
- Category
- Article
- ISSN
- 0392-6737
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A diffusive transport model for the liquid phase epitaxial (LPE) growth process of InP from In rich solution is presented. The concentration profiles of solute at different places in front of the growing crystal interface under normal conditions of LPE at successive time intervals have been simulate
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