Investigation of boron diffusion in polysilicon and its application to the design of p-n-p polysilicon emitter bipolar transistors with shallow emitter junctions

✍ Scribed by Post, I.R.C.; Ashburn, P.

• Book ID: 114538919
• Publisher: IEEE
• Year: 1991
• Tongue: English
• Weight: 1018 KB
• Volume: 38
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.97407