Low temperature depletion capacitance-voltage data, taken from a novel open design of surface superlattice fabricated on a GaAs/AlGaAs heterostructure, are compared with two theoretical models. These assume either that the Fermi level on the free semiconductor surface is pinned, or that the surface
Investigation of a new LPE method of obtaining AlGaAs heterostructures
β Scribed by Prof. Zh. Zh. I. Alferov; Dr. V. M. Andryev; S. G. Konnikov; V. R. Larionov; B. V. Pushny
- Publisher
- John Wiley and Sons
- Year
- 1976
- Tongue
- English
- Weight
- 489 KB
- Volume
- 11
- Category
- Article
- ISSN
- 0232-1300
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β¦ Synopsis
Abstract
A more detailed description of some peculiarities of the LPE method published by ALFEROV et al. (1974, 1975) for obtaining multilayer A^III^B^V^ heterostructures and more precise details of the boat construction are given. A particular attention is paid to intermediate transient layers.
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