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Inverse current gain improvement of bipolar transistors by double-base diffusion

✍ Scribed by Plunkett, J.C.; Stone, J.L.; Hyslop, A.

Book ID: 114592600
Publisher: IEEE
Year: 1977
Tongue: English
Weight: 350 KB
Volume: 24
Category: Article
ISSN: 0018-9383
DOI: 10.1109/t-ed.1977.18994

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