Degradation of bipolar transistor current gain by hot holes during reverse emitter-base bias stress

✍ Scribed by Neugroschel, A.; Chih-Tang Sah; Carroll, M.S.

• Book ID: 114536518
• Publisher: IEEE
• Year: 1996
• Tongue: English
• Weight: 590 KB
• Volume: 43
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.506781