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Introduction and annealing of defects in n -type gaas following irradiation with electrons and gamma rays

โœ Scribed by Kolchenko, T. I.; Lomako, V. M.


Book ID
127345669
Publisher
Informa UK (Taylor & Francis)
Year
1978
Weight
456 KB
Volume
37
Category
Article
ISSN
0033-7579

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g-irradiation induced defects ( 60 Co, dose of 3 ร‚ 10 19 cm ร€2 ) in n-GaN epilayers with a carrier concentration of 10 17 cm ร€3 (slightly doped) and 10 18 cm ร€3 (heavily doped) grown by low-pressure MOCVD on (0001) sapphire substrates have been investigated. The g-irradiation decreases the electron