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Intrinsic hole mobility and trapping in a regioregular poly(thiophene)

✍ Scribed by Salleo, A.; Chen, T. W.; Völkel, A. R.; Wu, Y.; Liu, P.; Ong, B. S.; Street, R. A.

Book ID
124101061
Publisher
The American Physical Society
Year
2004
Tongue
English
Weight
231 KB
Volume
70
Category
Article
ISSN
1098-0121

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## Abstract We investigate the mobility of poly(3‐hexylthiophene) (P3HT) over a carrier‐density range from 10^15^ to 10^20^ cm^−3^. Hole‐only diodes were used for densities below 10^16^ cm^−3^ and field‐effect transistors were used for carrier densities higher than 10^18^ cm^−3^. To fill the gap, i