Intraband spectroscopy of self-organized GaN/AlN quantum dots
✍ Scribed by Ana Helman; Frédéric Fossard; Maria Tchernycheva; Khalid Moumanis; Alain Lusson; François Julien; Benjamin Damilano; Nicolas Grandjean; Jean Massies; Christophe Adelman; Bruno Daudin; Daniel Le Si Dang
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 103 KB
- Volume
- 17
- Category
- Article
- ISSN
- 1386-9477
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a), P. G. Gucciardi (a), A. Vinattieri (a), M. Colocci (a), B. Damilano (b), F. Semond (b), N. Grandjean (b), and J. Massies (b)
In a stacked structure of cubic GaN/AlN islands grown in a Stranski-Krastanov mode, the critical thickness for the GaN islanding (2D-3D transition) decreases by a factor of up to 10 between the initial dot layer and the third one. This variation of the critical thickness is strongly dependent on the