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Intraband spectroscopy of self-organized GaN/AlN quantum dots

✍ Scribed by Ana Helman; Frédéric Fossard; Maria Tchernycheva; Khalid Moumanis; Alain Lusson; François Julien; Benjamin Damilano; Nicolas Grandjean; Jean Massies; Christophe Adelman; Bruno Daudin; Daniel Le Si Dang


Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
103 KB
Volume
17
Category
Article
ISSN
1386-9477

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In a stacked structure of cubic GaN/AlN islands grown in a Stranski-Krastanov mode, the critical thickness for the GaN islanding (2D-3D transition) decreases by a factor of up to 10 between the initial dot layer and the third one. This variation of the critical thickness is strongly dependent on the