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Intraband optical transitions of holes in strained SiGe quantum wells

✍ Scribed by A. I. Yakimov, V. V. Kirienko, V. A. Timofeev, A. I. Nikiforov

Book ID
120804878
Publisher
SP MAIK Nauka/Interperiodica
Year
2013
Tongue
English
Weight
241 KB
Volume
97
Category
Article
ISSN
0021-3640

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Direct gap related optical transitions i
Direct gap related optical transitions in Ge/SiGe quantum wells
✍ M. Bonfanti; E. Grilli; M. Guzzi; D. Chrastina; G. Isella; H. von KΓ€nel; H. Sigg πŸ“‚ Article πŸ“… 2009 πŸ› Elsevier Science 🌐 English βš– 334 KB

An experimental study of the direct-gap related optical transitions in strain-compensated Ge/Si 0.15 Ge 0.85 multiple quantum wells (MQWs) is presented. These structures are of particular interest due to the proximity of G-type and L-type conduction band states and due to their type I band alignment