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Intraband absorption in silicon nanocrystals: The combined effect of shape and crystal orientation

✍ Scribed by de Sousa, J. S.; Leburton, J.-P.; Freire, V. N.; da Silva, E. F.

Book ID
121348673
Publisher
American Institute of Physics
Year
2005
Tongue
English
Weight
391 KB
Volume
87
Category
Article
ISSN
0003-6951

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πŸ“œ SIMILAR VOLUMES

On the orientation effect in the polygon
On the orientation effect in the polygonization of bent silicon crystals
✍ F.L Vogel Jr. πŸ“‚ Article πŸ“… 1958 πŸ› Elsevier Science βš– 373 KB

Experiments on the bending of silicon crystals at elevated temperature show that the ease with which polygonization occurs depends on the orientation of the bending crystal. If the crystal is oriented so that only one slip system operates in a given region, an homogeneous aggregation of dislocations