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Intervalenceband and plasmon optical absorption in heavily doped GaAs:C

✍ Scribed by Songprakob, W.; Zallen, R.; Tsu, D. V.; Liu, W. K.

Book ID: 120939666
Publisher: American Institute of Physics
Year: 2002
Tongue: English
Weight: 347 KB
Volume: 91
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.1424050

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## Abstract Using the Green function methods in the Feynman‐path integral formulation, applied to disordered systems and developed already in previous papers, the optical absorption edge of heavily doped semiconductors in zero magnetic field at low temperatures is investigated. Two band‐structure m