Intersubband absorption in strained AlxGa1−xN/GaN quantum wells with InyGa1−yN nanogroove layers
✍ Scribed by J. Zhu; S.L. Ban; S.H. Ha
- Book ID
- 113915335
- Publisher
- Elsevier Science
- Year
- 2012
- Tongue
- English
- Weight
- 356 KB
- Volume
- 51
- Category
- Article
- ISSN
- 0749-6036
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We report a low temperature photoluminescence study on two identical Al 0.13 Ga 0.87 N/GaN single quantum wells (QWs), which are pseudomorphically grown on either a GaN or an AlGaN buffer layer. The red shift of the QW emission due to the quantum confined Stark effect, is found to be strongest in th
The absorption properties in hetero-polarization GaN/Al x Ga 1Àx N (x ¼ 0:06) quantum well structures are studied in reflection, photoreflection, and photoluminescence excitation spectroscopy and compared with the results of band structure calculations. Above the energy of the main luminescence tran