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Interpretation of some structures of SiO2 by assumptions on the electron spatial correlation

✍ Scribed by Schubert, K.


Book ID
114514726
Publisher
International Union of Crystallography
Year
1991
Tongue
English
Weight
289 KB
Volume
47
Category
Article
ISSN
0108-7681

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Defects induced by high-energy electrons in Si-SiO 2 structure have been studied by the optically stimulated electron emission (OSEE) method. Si-SiO 2 structures with oxide thickness of 100 nm are irradiated with 23 MeV electrons for different durations. It is shown that most of the defects created