Ceriutii Oxide films were prepared by vaciiurii therinal evaporation from tantaluni hoat i n a conventional vacuum coating unit. Current-voltage characteristics were studied for different filni thicknesses. The breakdown voltage ( VB) arid dielectric field strength ( E B ) were calculated. It is fbu
β¦ LIBER β¦
Interpretation of dielectric properties of thin film Al/Al2O3/Au structures
β Scribed by G. Delaunay; J. Despujols
- Publisher
- Elsevier Science
- Year
- 1986
- Tongue
- English
- Weight
- 475 KB
- Volume
- 143
- Category
- Article
- ISSN
- 0040-6090
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Electrical properties of Al-CeO2-Al thin
β
Dr. M. Chandra Shekar; Dr. V. Hari Babu
π
Article
π
1984
π
John Wiley and Sons
π
English
β 352 KB
π 1 views
Conduction properties of thin Al2O3 film
β
S.P.S. Arya; H.P. Singh
π
Article
π
1982
π
Elsevier Science
π
English
β 544 KB
Structural and Magnetic Properties of Fe
β
Bai, J. ;Yang, Z. ;Wei, F. ;Matsumoto, M. ;Morisako, A.
π
Article
π
2002
π
John Wiley and Sons
π
English
β 96 KB
π 2 views
Subject classification: 68.55. Jk; 75.50.Ss The magnetic and structural properties of FePt and FePt-Al 2 O 3 films deposited by rf-sputtering on 7059 corning glass substrates were investigated. The coercivities of the films can be adjusted from 20 to 12.3 kOe through controlling the ordering degree
Relations between the parameters of thin
β
T. Berlicki
π
Article
π
1980
π
Elsevier Science
π
English
β 136 KB
Properties of Al2O3 thin films prepared
β
W. KΓΌbler
π
Article
π
1991
π
Elsevier Science
π
English
β 883 KB
Studies of the optical and structural pr
β
Mansour S Al-Robaee; GN Subbanna; K Narasimha Rao; S Mohan
π
Article
π
1994
π
Elsevier Science
π
English
β 676 KB