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Internal quantum efficiency of GaN-based light-emitting diodes grown on silicon substrates determined from rate equation analyses

✍ Scribed by Ryu, Han-Youl; Jeon, Ki-Seong; Sung, Jun-Ho; Lee, Min-Woo; Lee, Euna; Song, Hooyoung; Kang, Min-Gu; Choi, Yoonho; Lee, Jeong-Soo

Book ID: 122688496
Publisher: Elsevier Science
Year: 2013
Tongue: English
Weight: 371 KB
Volume: 13
Category: Article
ISSN: 1567-1739
DOI: 10.1016/j.cap.2013.06.003

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## Abstract We studied the nonthermal mechanism of quantum efficiency (QE) roll‐off in InGaN‐based multiple‐quantum‐well LEDs on sapphire and bulk GaN substrates with In content ranging from 1% to 28%. Both the efficiency evolution and peak energy shift appear to be strongly dependent on the In con