High efficiency liquid phase epitaxy GaAs solar cells and space quality single-crystal silicon solar cells were irradiated with high energy electrons at 0.7, 1.0, 2.0 and 10 MeV to a total fluence of 4 ร 10 Is electrons cm -2. Photovoltaic characteristics were measured at incremental fluence levels,
โฆ LIBER โฆ
Internal power dissipation in gallium arsenide solar cells
โ Scribed by M.F. Lamorte
- Publisher
- Elsevier Science
- Year
- 1963
- Weight
- 742 KB
- Volume
- 3
- Category
- Article
- ISSN
- 0365-1789
No coin nor oath required. For personal study only.
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