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Electron radiation damage in gallium arsenide solar cells

โœ Scribed by Delores H. Walker; Richard L. Statler


Publisher
Elsevier Science
Year
1987
Weight
452 KB
Volume
22
Category
Article
ISSN
0379-6787

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โœฆ Synopsis


High efficiency liquid phase epitaxy GaAs solar cells and space quality single-crystal silicon solar cells were irradiated with high energy electrons at 0.7, 1.0, 2.0 and 10 MeV to a total fluence of 4 ร— 10 Is electrons cm -2. Photovoltaic characteristics were measured at incremental fluence levels, and finally the power output and the critical fluence were calculated as a function of electron energy. The ratio of the critical fluence in GaAs cells to the critical fluence in silicon back-surface reflecting cells varied from 2 to 30, depending on the electron energy. A calculation was made of the comparative power degradation of solar cells in a 20 370 km circular orbit for 5 years, indicating that the power loss in GaAs cells is only 4%, while silicon back-surface field cells degrade 12% in maximum power.


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