Electron radiation damage in gallium arsenide solar cells
โ Scribed by Delores H. Walker; Richard L. Statler
- Publisher
- Elsevier Science
- Year
- 1987
- Weight
- 452 KB
- Volume
- 22
- Category
- Article
- ISSN
- 0379-6787
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โฆ Synopsis
High efficiency liquid phase epitaxy GaAs solar cells and space quality single-crystal silicon solar cells were irradiated with high energy electrons at 0.7, 1.0, 2.0 and 10 MeV to a total fluence of 4 ร 10 Is electrons cm -2. Photovoltaic characteristics were measured at incremental fluence levels, and finally the power output and the critical fluence were calculated as a function of electron energy. The ratio of the critical fluence in GaAs cells to the critical fluence in silicon back-surface reflecting cells varied from 2 to 30, depending on the electron energy. A calculation was made of the comparative power degradation of solar cells in a 20 370 km circular orbit for 5 years, indicating that the power loss in GaAs cells is only 4%, while silicon back-surface field cells degrade 12% in maximum power.
๐ SIMILAR VOLUMES
t The term 'support' means to provide the scientific equipment ('science') with environmental protection from the space environment, to keep it at acceptable temperatures and to send the data it produces to Earth in readable form, i.e. the services provided by the spacecraft. This article is a US Go