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Internal friction of interstitial solid solutions of oxygen and nitrogen in vanadium

✍ Scribed by J.T. Stanley; C.A. Wert


Publisher
Elsevier Science
Year
1955
Weight
260 KB
Volume
3
Category
Article
ISSN
0001-6160

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✦ Synopsis


D= 500 A, the average field was calculated for film thicknesses in the range of 100-5000 A. The voltage across the film corresponding to each thickness was then calculated from the average field. A plot of thickness versus voltage calculated in this manner is compared in Fig. 1 with experimental data obtained from measurements of capacity versus voltage under the stated conditions. It may be seen that the experimental points fall accurately on a straight line while the calculated curve is definitely nonlinear. For larger values of 6 the curvature of such a plot would be even more pronounced. Only when 6 is very small, that is, when space charge is negligible, is the variation of average field with film thickness so small as to be undetectable experimentally.

It is therefore concluded that the assumption of a negligible number of ions in transit through the film is valid.


πŸ“œ SIMILAR VOLUMES


Internal friction in oxygen-vanadium and
✍ R.W Powers πŸ“‚ Article πŸ“… 1954 πŸ› Elsevier Science βš– 449 KB

Two internal friction peaks have been identified in vanadium. One occurring at 186Β°C for frequencies of 1 cps is associated with the stress-induced diffusion of oxygen, and the other occurring at 272Β°C is associated with the diffusion of nitrogen. The corresponding activation energies for these peak