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Interfacial studies and electrical characterisation of heteroepitaxial InSb on GaAs (100) grown by MBE

✍ Scribed by C.F. McConville; C.R. Whitehouse; G.M. Williams; A.G. Cullis; T. Ashley; M.S. Skolnick; G.T. Brown; S.J. Courtney


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
695 KB
Volume
95
Category
Article
ISSN
0022-0248

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Hard Heteroepitaxy on 2Β° Off-oriented Ga
✍ M. Sc. J. Sadowski; Dr. E. Dynowska; Dr. K. RegiΕ„ski; Prof. M. A. Herman πŸ“‚ Article πŸ“… 1993 πŸ› John Wiley and Sons 🌐 English βš– 641 KB

## Abstract The MBE growth of PbTe layers on GaAs (100) 2Β° off‐oriented substrates belongs to hard heteroepitaxy, because the two materials differ strongly in their lattice constants and, in addition, they also exhibit different crystal structures. Consequently, phases with different surface orient