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Interfacial Structure of GaN and InN Thin Films Grown on ZnO Substrates

✍ Scribed by Ohgaki, Takeshi; Sugimura, Shigeaki; Ryoken, Haruki; Ohashi, Naoki; Sakaguchi, Isao; Sekiguchi, Takashi; Haneda, Hajime

Book ID
120761949
Publisher
Trans Tech Publications, Ltd.
Year
2006
Tongue
English
Weight
414 KB
Volume
301
Category
Article
ISSN
1662-9795

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πŸ“œ SIMILAR VOLUMES

Interfacial structure of MBE grown InN o
Interfacial structure of MBE grown InN on GaN
✍ Kehagias, Th. ;Iliopoulos, E. ;Delimitis, A. ;Nouet, G. ;Dimakis, E. ;Georgakila πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 127 KB

## Abstract The structural properties of the interfacial area of InN thin films, grown by rf‐plasma MBE on top of GaN/Al~2~O~3~ substrates have been investigated by TEM and HRTEM. Continuous or columnar film growth highly depends on the pre‐growth of an InN nucleation layer and low substrate temper