✦ LIBER ✦

Interfacial strain in 3C-SiC/Si(100) pseudo-substrates for cubic nitride epitaxy

✍ Scribed by Bustarret, E. ;Vobornik, D. ;Roulot, A. ;Chassagne, T. ;Ferro, G. ;Monteil, Y. ;Martinez-Guerrero, E. ;Mariette, H. ;Daudin, B. ;Dang, Le Si

Book ID: 105362140
Publisher: John Wiley and Sons
Year: 2003
Tongue: English
Weight: 289 KB
Volume: 195
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.200306261

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Strain modification in epitaxial 2H-AlN

Strain modification in epitaxial 2H-AlN layers on 3C-SiC/Si(111) pseudo-substrates

✍ Nader, R.; Pezoldt, J. 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 477 KB

Elaboration of (1 1 1) oriente

Elaboration of (1 1 1) oriented 3C–SiC/Si layers for template application in nitride epitaxy

✍ M. Zielinski; M. Portail; S. Roy; T. Chassagne; C. Moisson; S. Kret; Y. Cordier 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 998 KB

Various aspects of the elaboration of (1 1 1) oriented 3C-SiC films on silicon are discussed within a comparative study of different layer characteristics for (1 1 1) and (1 0 0) orientations. The dissimilarities between both orientations are pointed out. This includes the growth mode during the nuc