Interfacial reactions in Ti/SiC layered films with and without thin diffusion barriers

✍ Scribed by M. Nathan; J.S. Ahearn

• Publisher: Elsevier Science
• Year: 1990
• Tongue: English
• Weight: 605 KB
• Volume: 126
• Category: Article
• ISSN: 0921-5093
• DOI: 10.1016/0921-5093(90)90127-o

✦ Synopsis

Four materials--Al203, TiB x, VB x, and TaBx (x < 2)--with thicknesses from 50 to 200 A were evaluated as interracial reaction barriers between titanium and SiC in a thin film model system. Two of these materials--Al203 and TiBx--show effectiveness in slowing the interdiffusion and reaction of titanium and SiC under normal vacuum annealing at 820 °C. None of the four materials shows any significant effect on the reaction in rapid thermal annealings at 900 and IO00°C, most probably owing due to thermal shock influences on the thin film system. The first product of the reaction between titanium and SiC is TisSi3, regardless of barrier.