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Interface structure and Schottky barriers of epitaxial Pb on Si(111)

โœ Scribed by T. Hibma; H.H. Weitering; D.R. Heslinga; T.M. Klapwijk


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
316 KB
Volume
48-49
Category
Article
ISSN
0169-4332

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๐Ÿ“œ SIMILAR VOLUMES


Schottky barrier at the Al/Si(111) doped
โœ V.G. Zavodinsky; I.A. Kuyanov ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 87 KB

Using the local-density approximation method we have investigated a cluster model of the Al/Si(111) interface. P atoms were placed in the fifth silicon double-atomic layer (DAL) counting from the interface. The second DAL was doped with either Ga or As. The Schottky barrier height was found to be 0.