Interface roughness in double-barrier resonant-tunneling devices affects the lateral electron motion in the quantum well and can give rise to subsidiary subbands or quasibound states in the well. We demonstrate that a shoulder frequently appearing beyond the principal resonance peak in the current-v
Interface Roughness Effects in Resonant Tunneling Structures
✍ Scribed by Galvão, Y. ;Triques, A.L.C. ;Schulz, P. A.
- Publisher
- John Wiley and Sons
- Year
- 1997
- Tongue
- English
- Weight
- 145 KB
- Volume
- 164
- Category
- Article
- ISSN
- 0031-8965
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