Interface phonons in short-period GaAs/AlAs superlattices: Wave vector-selective and defect-activated

Identification of zone boundary and inte

Identification of zone boundary and interface phonon recombinations in photoluminescence from type-II GaAs/AlAs short-period superlattices

✍ T. Gilmour; P.C. Klipstein; W.R. Tribe; G.W. Smith 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 89 KB

We present the first identification of the direct participation of the GaAs interface (IF) mode in the phonon-assisted recombinations from type-II GaAs/AlAs short-period superlattices (SPSL). This is achieved by utilizing a novel first-order resonant Raman process associated with the type-II X z -ba