Interface optical phonon modes and electron–phonon interactions in wurtzite GaN/ZnO quantum wells

✍ Scribed by Shu-Yi Wei; Yan Wang; Ling-Ling Wei

• Publisher: Elsevier Science
• Year: 2010
• Tongue: English
• Weight: 325 KB
• Volume: 405
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2009.08.298

✦ Synopsis

Within the framework of the dielectric continuum (DC) model and Loudon's uniaxial crystal model, the interface-optical-phonon (IOP) modes and their electron-phonon interactions Fr € ohlich-like Hamiltonian are investigated in wurtzite multilayer heterostructures. And we also numerically calculate the dispersion relation and electron-IOP coupling strength in a wurtzite GaN/ZnO coupled quantum wells (QWs). The dispersion relation curves show that wurtzite crystal exits the anisotropic effects. The IOP modes have eight branches, which exist in frequency ranges ½o ?;TZnO ; o z;TGaN and ½o ?;LZnO ; o z;LGaN , respectively. Each mode has a definite symmetry with respect to the center of the QWs structure. The lower-frequency modes have more contribution for the electron-IOP interactions than the higherfrequency ones. In particular, we find that there are some frequency overlaps between the IOP and other optical phonon modes for the wurtzite GaN/ZnO coupled QWs.