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Interface instability in the growth of Ga1-xInxAsySb1-y and thermodynamic considerations

✍ Scribed by Tetsuo Ozawa; Yasuhiro Hayakawa; Masashi Kumagawa


Book ID
103168630
Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
336 KB
Volume
115
Category
Article
ISSN
0022-0248

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The growth in the miscibility gap and the characterization of MOVPE Gal\_~InxAsySb~\_ ~ quaternary layers have been undertaken. The experimental conditions have been determined to obtain quaternary epilayers in the miscibility gap grown on GaSb with a good morphology even for lattice mismatched laye