Growth and characterization of metal-org
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A. Giani; J. Bougnot; F. Pascal-Delannoy; G. Bougnot; J. Kaoukab; G.G. Allogho;
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Article
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1991
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Elsevier Science
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English
β 334 KB
The growth in the miscibility gap and the characterization of MOVPE Gal\_~InxAsySb~\_ ~ quaternary layers have been undertaken. The experimental conditions have been determined to obtain quaternary epilayers in the miscibility gap grown on GaSb with a good morphology even for lattice mismatched laye