Growth and characterization of metal-organic vapour phase epitaxial Ga1−xInxAsySb1−y quaternary layers

✍ Scribed by A. Giani; J. Bougnot; F. Pascal-Delannoy; G. Bougnot; J. Kaoukab; G.G. Allogho; M. Bow

• Publisher: Elsevier Science
• Year: 1991
• Tongue: English
• Weight: 334 KB
• Volume: 9
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(91)90159-s

✦ Synopsis

The growth in the miscibility gap and the characterization of MOVPE Gal_~InxAsySb~_ ~ quaternary layers have been undertaken. The experimental conditions have been determined to obtain quaternary epilayers in the miscibility gap grown on GaSb with a good morphology even for lattice mismatched layers, in varying ~Pm and D.~. The material quality has been assessed by single and double X-ray diffraction, The spectral responses of GaInAsSb(p)/GaSb(n) heterojunction are given. A spectral response obtained under illumination from the GaSb side, presents a good response at 2.75/zm.