Interface formation between GaS and CVD diamond films
β Scribed by A.B.M.O. Islam; Y. Nishiyama; T. Tambo; C. Tatsuyama; T. Ito
- Book ID
- 117220288
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 323 KB
- Volume
- 448
- Category
- Article
- ISSN
- 0039-6028
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π SIMILAR VOLUMES
## Ε½ . Ε½ . Thin GaS films deposited on B-doped diamond as-grown and on oxygen-annealed B-doped diamond O-ann. films Ε½ . q Ε½ . grown by plasma-assisted chemical vapor deposition CVD on p -type Si 001 substrate were characterized by Auger Ε½ . Ε½ . electron spectroscopy AES , and X-ray photoemission
Understanding of the incorporation of hydrogen and its role in determining the properties of CVD diamond is critical to the successful commercial production of these films. Hydrogen is usually the most abundant impurity in solid-state CVD diamond and has been studied extensively by a variety of tech